Product Summary

The H11D1M is a photo-transistor-type optically coupled optoisolator. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. The applications of the H11D1M include Power supply regulators, Digital logic inputs, Microprocessor inputs, Appliance sensor systems and Industrial controls.

Parametrics

H11D1M absolute maximum ratings: (1)TSTG, Storage Temperature: -55 to +150℃; (2)TOPR, Operating Temperatur: -40 to +100℃; (3)TSOL, Lead Solder Temperature (Wave Solder): 260℃ for 10 sec; (4)PD, Total Device Power Dissipation: 260 mW TA = 25℃; 3.5 mW/℃ at Derate Above 25℃.

Features

H11D1M features: (1)High voltage: BVCER = 300V; (2)High isolation voltage: 7500 VAC peak, 1 second ; (3)Underwriters Laboratory (UL) recognized File # E90700, Volume 2.

Diagrams

H11D1M schematic

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
H11D1M
H11D1M

Fairchild Semiconductor

Transistor Output Optocouplers Hi Volt Phototrans

Data Sheet

0-1: $0.47
1-25: $0.41
25-100: $0.32
100-250: $0.28
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
H11D1
H11D1

Vishay Semiconductors

Transistor Output Optocouplers HV Phototransistor

Data Sheet

0-1: $0.68
1-10: $0.60
10-100: $0.57
100-250: $0.50
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